期刊论文详细信息
THIN SOLID FILMS 卷:603
Synthesis and electrical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films on Si wafers using chemical solution deposition
Article
Arai, Takashi1  Ohno, Tomoya2  Matsuda, Takeshi2  Sakamoto, Naonori3  Wakiya, Naoki3  Suzuki, Hisao3 
[1] Shizuoka Univ, Grad Sch Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328561, Japan
[2] Kitami Inst Technol, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan
[3] Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328561, Japan
关键词: Epitaxial growth;    Thin film;    Chemical solution deposition;    PMN-PT;    Piezoelectricity;    Relaxor ferroelectrics;   
DOI  :  10.1016/j.tsf.2016.01.058
来源: Elsevier
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【 摘 要 】

Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) has attracted a great deal of attention for its use in capacitors, piezoelectric actuators, sensors, and optical devices in integrated circuits. For these applications, epitaxially grown PMN-PT thin films on Si wafers are required. This paper describes the first trial in fabricating epitaxially grown PMN-PT thin films on a LSCO/CeO2/YSZ buffered Si substrate using chemical solution deposition (CSD). High-quality buffer layers make the epitaxial growth of PMN-PT thin films possible, even by CSD. Despite very thin films that have thicknesses of 170nm, the resulting PMN-PT thin films exhibit good electrical properties, such as a high dielectric constant of 1400 and well-defined P-E hysteresis loops. (C) 2016 Elsevier B.V. All rights reserved.

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