THIN SOLID FILMS | 卷:603 |
Synthesis and electrical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films on Si wafers using chemical solution deposition | |
Article | |
Arai, Takashi1  Ohno, Tomoya2  Matsuda, Takeshi2  Sakamoto, Naonori3  Wakiya, Naoki3  Suzuki, Hisao3  | |
[1] Shizuoka Univ, Grad Sch Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328561, Japan | |
[2] Kitami Inst Technol, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan | |
[3] Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328561, Japan | |
关键词: Epitaxial growth; Thin film; Chemical solution deposition; PMN-PT; Piezoelectricity; Relaxor ferroelectrics; | |
DOI : 10.1016/j.tsf.2016.01.058 | |
来源: Elsevier | |
【 摘 要 】
Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) has attracted a great deal of attention for its use in capacitors, piezoelectric actuators, sensors, and optical devices in integrated circuits. For these applications, epitaxially grown PMN-PT thin films on Si wafers are required. This paper describes the first trial in fabricating epitaxially grown PMN-PT thin films on a LSCO/CeO2/YSZ buffered Si substrate using chemical solution deposition (CSD). High-quality buffer layers make the epitaxial growth of PMN-PT thin films possible, even by CSD. Despite very thin films that have thicknesses of 170nm, the resulting PMN-PT thin films exhibit good electrical properties, such as a high dielectric constant of 1400 and well-defined P-E hysteresis loops. (C) 2016 Elsevier B.V. All rights reserved.
【 授权许可】
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