A Unified Depletion/Inversion Model for Heterojunction Trigate FinFETs DC Characteristics

IEEE Access

Qamar-Ud-Din Memon¹  Umer F. Ahmed¹  Muhammad M. Ahmed¹ 

[1] Department of Electrical Engineering, Capital University of Science and Technology, Islamabad, Pakistan;

关键词: FinFET;    heterojunction devices;    DC characteristics;    analytical model;   

DOI  :  10.1109/ACCESS.2021.3090309

来源: DOAJ

【 摘 要 】

This paper presents a comprehensive $I-V$ model for the evaluation of above threshold DC characteristics of trigate AlGaN/GaN FinFETs for both depletion and inversion mode of operations. For the depletion mode, 2DEG carrier concentration, $n_{s}$ , is evaluated considering the trigate geometry of the device, which is then used to assess drain current $(I_{\text {2D}})$ for both the linear as well as the saturation region of operations. At a relatively higher gate bias, where the 2DEG is fully un-depleted, a significant rise in the drain current is observed which is associated with the creation of two additional side channels in the GaN layer of AlGaN/GaN FinFET, caused by the inversion of carriers. This component of the drain current, referred to as inversion current ( $I_{inv}$ ), is modeled using the solution of a 2D Poisson equation. The total current ( $I_{ds}$ ) is the summation of both the depletion as well as the inversion currents ( $I_{ds} = I_{inv} + I_{\text {2D}}$ ). The developed technique is validated using experimental data and is seen to exhibit a good degree of accuracy. Therefore, the proposed model could serve as a useful tool to predict AlGaN/GaN FinFETs output and transfer characteristics.

【 授权许可】

Unknown