DC, frequency characterization of Dual Gated Graphene FET (GFET) Compact Model and its Circuit Application - Doubler Circuit

International Conference on Materials, Alloys and Experimental Mechanics 2017

材料科学;金属学;机械制造

Bala Tripura Sundari, B.^1 ; Arya Raj, K.^1

Department of Electronics, Communication Amrita School of Engineering, Coimbatore Amrita Vishwa Vidya Peetham, Amrita University, India^1

关键词: Circuit application;    Closed-form expression;    DC characteristics;    Equivalent currents;    Frequency characterization;    Frequency multiplier;    Graphene fets (GFET);    Spectral purity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/225/1/012016/pdf
DOI  :  10.1088/1757-899X/225/1/012016

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

A Graphene FET(GFET) based on computational closed form expressions termed as compact model using quasi ballistic approach for circuit simulation is developed. The Verilog - A dual gated GFET model is developed for a channel length of 90 nm and a width of 1 μm and is found to have a better equivalent current and a higher Ion/Ioff ratio has been attained than the single gated model. It demonstrates the effect of body bias on the conductivity characteristics, as shown by the shift of the Dirac point. Also the frequency characterization of the model is obtained and verified by development of frequency multiplier circuits - doubler; the performance has been compared to have maintained in terms of spectral purity but having a better output amplitude validating the DC characteristics of the dual gated VS model used in the doubler circuit.