Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology

Micro & nano letters

article

Deepak Kumar Panda¹  Trupti Ranjan Lenka² 

[1] School of Electronics, VIT-AP University;Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology

关键词: intermodulation distortion;    gallium compounds;    wide band gap semiconductors;    III-V semiconductors;    high electron mobility transistors;    MOSFET;    ferroelectric devices;    linearity improvement;    dual gate technology;    enhancement mode dual gate ferroelectric gallium nitride metal oxide semiconductor-high electron mobility transistor;    enhanced linearity characteristics;    input third-order intercept point;    third-order intermodulation;    improved linearity performance;    dual gate device;    DC characteristics;    small signal parameters;    gate voltage;    technology computer-aided device simulation;    E-mode ferroelectric MOS-HEMT;    single gate un-recessed ferroelectric MOS-HEMT;    look up table-based large signal models;    input gain compression point;    carrier to intermodulation power ratio;    harmonic balance simulation;    transconductance distribution;    radiofrequency front end receiver;    GaN;   

DOI  :  10.1049/mnl.2018.5499

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

In this work, an enhancement mode dual gate ferroelectric gallium nitride metal oxide semiconductor-high electron mobility transistor (GaN MOS-HEMT) is proposed with enhanced linearity characteristics. The different DC characteristics of the device are analysed and compared with available experimental data of single gate un-recessed ferroelectric GaN MOS-HEMT. In order to analyse the linearity performance of the devices, a look up table-based large signal model is developed directly from technology computer-aided device simulation results built by feeding different small signal parameters. The different linearity characteristics such as input third-order intercept point (IIP3), the input gain compression point (P1dB), third-order intermodulation (IM3) and the carrier to intermodulation power ratio of both the devices are compared by harmonic balance simulation of the developed large signal models. The interlink between IIP3 and IM3 with transconductance indicates that the broader the transconductance distribution with respect to different gate voltage generates higher IIP3 and lower IM3, which results in an improved linearity performance. The dual gate device shows improved linearity performance resulting in applicability in radiofrequency front end receiver.

【 授权许可】

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