Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device

double gate MOSFET;FinFET;Gallium Nitride;TCAD simulation;Indium Antimonide;ultra-thin body;Tri-gate

Jin, Yawei ; Mark Johnson, Committee Member,W. Rhett Davis, Committee Member,Doug Barlage, Committee Chair,Veena Misra, Committee Member,Jin, Yawei ; Mark Johnson ; Committee Member ; W. Rhett Davis ; Committee Member ; Doug Barlage ; Committee Chair ; Veena Misra ; Committee Member

University:North Carolina State University

关键词: double gate MOSFET;    FinFET;    Gallium Nitride;    TCAD simulation;    Indium Antimonide;    ultra-thin body;    Tri-gate;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/4053/etd.pdf?sequence=1&isAllowed=y

美国|英语

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