Optimization of cylindrical textile organic field effect transistors using TCAD simulation tool

17th World Textile Conference AUTEX 2017 - Shaping the Future of Textiles

Louris, E.^1,2 ; Stefanakis, D.^1 ; Priniotakis, G.^2 ; Van Langenhove, L.^3 ; Tassis, D.^1

Aristotle University of Thessaloniki, School of Physics, Department of Solid State Physics, University Campus, Thessaloniki

54124, Greece^1

Piraeus University of Applied Sciences, School of Engineering, Department of Textile Engineering, 250 Thivon and P. Ralli Str., Egaleo

12244, Greece^2

Ghent University, Faculty of Engineering and Architecture, Department of Textiles, Technologiepark 907, Zwijnaarde (Gent)

9052, Belgium^3

关键词: Channel length;    Critical region;    Electrical characteristic;    Gate oxide thickness;    Organic thin film transistors;    Practical use;    TCAD simulation;    Transistor performance;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/254/16/162006/pdf
DOI  :  10.1088/1757-899X/254/16/162006

来源: IOP

【 摘 要 】

We used a commercial TCAD tool in order to simulate a cylindrical Textile Organic Field Effect Transistor (TOFET) and study the impact of different critical region sizes in its electrical characteristics. The simulation was based on models and parameters similar to those of previous simulations in Organic Thin Film Transistors. We have seen that it is potentially feasible to build transistors which can operate in low voltages by using typical materials. Even if some of the selected typical materials have to be replaced by others more suitable for practical use in the textile industry, the simulation is a good starting point for estimating the device typical operation and parameters. By optimizing critical region sizes of the device we conclude that the device should have an active layer thickness below 100 nm, channel length around 10μm and gate oxide thickness as small as possible (300 nm or less), in order to have optimum transistor performance.