Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED

3rd International Conference on Communication Systems

无线电电子学

Meel, K.^1 ; Mahala, P.^2 ; Singh, S.^3

Physics Department, BKBIET, CEERI road, Pilani, Rajasthan

333031, India^1

Birla Institute of Technology and Science (BITS), Pilani, Rajasthan

333031, India^2

Flexible and Non-Silicon Electronics Group, CSIR-CEERI, Pilani, Rajasthan

333031, India^3

关键词: Barrier widths;    Electrical and optical properties;    IV characteristics;    Light emitting diode (LED);    Multi quantum wells;    Optimized structures;    TCAD simulation;    Well width;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/331/1/012008/pdf
DOI  :  10.1088/1757-899X/331/1/012008

来源: IOP

【 摘 要 】

This paper presents the optimization of the multi-quantum well based Light Emitting Diode (LED) structure. We investigate the electrical and optical properties of the device on several factors like well width, barrier width, the number of quantum wells and then optimize the structure. The device is optimized for a well width and barrier width of 3nm and 6nm respectively, consisting of five quantum wells. Simulations were carried out using Silvaco ATLAS TCAD simulation program (Silvaco International, USA). The optimized structure was grown by MOCVD and fabricated. The I-V characteristic was also measured.