Influence of the quantum well models on the numerical simulation of planar InGaN/GaN LED results

International Conference on Microtechnology and Thermal Problems in Electronics 2015; International Conference on Smart Engineering of New Materials 2015

Podgórski, J.^1 ; Wony, J.^1 ; Lisik, Z.^1

Lodz University of Technology, Department of Semiconductor and Optoelectronic Devices, 211/215 Wolczanska Street, Lodz

90-924, Poland^1

关键词: Commercial software;    Electric models;    Gallium Nitride (GaN);    Ingan/gan leds;    Light emitting diode (LED);    Physical model;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/709/1/012013/pdf
DOI  :  10.1088/1742-6596/709/1/012013

来源: IOP

【 摘 要 】

Within this paper, we present electric model of a light emitting diode (LED) made of gallium nitride (GaN) followed by examples of simulation results obtained by means of Sentaurus software, which is the part of the TCAD package. The aim of this work is to answer the question of whether physical models of quantum wells used in commercial software are suitable for a correct analysis of the lateral LEDs made of GaN.