Evaluation of the quality of green InGaN LEDs by values of the threshold current

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Radaev, O.A.^1 ; Sergeev, V.A.^1,2 ; Frolov, I.V.^2

Ulyanovsk State Technical University, Ulyanovsk

432027, Russia^1

Ulyanovsk Branch, Kotel'Nikov Institute of Radio-Engineering and Electronics of RAS, 48/2 Goncharov Street, Ulyanovsk

432071, Russia^2

关键词: Concentration gradients;    Current dependence;    Current thresholds;    External quantum efficiency;    InGaN LED;    Ingan/gan leds;    Threshold currents;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012087/pdf
DOI  :  10.1088/1742-6596/741/1/012087

来源: IOP

【 摘 要 】

The article shows the possibility of using the threshold current for evaluating the quality of green InGaN/GaN LEDs. It was determined that the current threshold correlated with the position of the maximum of the current dependence of external quantum efficiency, and a concentration gradient of charge carriers in the heterostructure.