Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials †

Journal of Low Power Electronics and Applications

Yongxun Liu¹  Toshihide Nabatame²  Takashi Matsukawa¹  Kazuhiko Endo¹  Shinichi O’uchi¹  Junichi Tsukada¹  Hiromi Yamauchi¹  Yuki Ishikawa¹  Wataru Mizubayashi¹  Yukinori Morita¹  Shinji Migita¹  Hiroyuki Ota¹  Toyohiro Chikyow² 

[1] National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan; E-Mails:;National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan; E-Mails:

关键词: charge trapping (CT);    flash memory;    silicon on insulator (SOI);    FinFET;    blocking layer;    high-k metal gate;    variability;   

DOI  :  10.3390/jlpea4020153

来源: mdpi

【 摘 要 】

The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al₂O₃ and SiO₂ have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (V_t) variability, and the memory characteristics have been comparatively investigated. It was experimentally found that the better SCE immunity and a larger memory window are obtained by introducing a high-k Al₂O₃ blocking layer instead of a SiO₂ blocking layer. It was also confirmed that the variability of V_t before and after one program/erase (P/E) cycle is almost independent of the blocking layer materials.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.