Journal of Low Power Electronics and Applications | |
Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials † | |
Yongxun Liu1  Toshihide Nabatame2  Takashi Matsukawa1  Kazuhiko Endo1  Shinichi O’uchi1  Junichi Tsukada1  Hiromi Yamauchi1  Yuki Ishikawa1  Wataru Mizubayashi1  Yukinori Morita1  Shinji Migita1  Hiroyuki Ota1  Toyohiro Chikyow2  | |
[1] National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan; E-Mails:;National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan; E-Mails: | |
关键词: charge trapping (CT); flash memory; silicon on insulator (SOI); FinFET; blocking layer; high-k metal gate; variability; | |
DOI : 10.3390/jlpea4020153 | |
来源: mdpi | |
【 摘 要 】
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (Vt) variability, and the memory characteristics have been comparatively investigated. It was experimentally found that the better SCE immunity and a larger memory window are obtained by introducing a high-k Al2O3 blocking layer instead of a SiO2 blocking layer. It was also confirmed that the variability of Vt before and after one program/erase (P/E) cycle is almost independent of the blocking layer materials.
【 授权许可】
CC BY
© 2014 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
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