An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

Sensors

Jürgen Bruns¹  Klaus Petermann¹  Matthias Jäger¹  Hassan Gargouri²  Jessica Schneidewind²  Cay Pinnow² 

[1] Fachgebiet Hochfrequenztechnik/Photonik, HFT4, Technische Universität Berlin, 10587 Berlin, Germany;Plasma Process Technology group, SENTECH Instruments GmbH, 12489 Berlin, Germany;

关键词: silicon photonics;    silicon on insulator (SOI);    ring resonator;    refractive index sensing;   

DOI  :  10.3390/s21051628

来源: DOAJ

【 摘 要 】

A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a ${\mathrm{TiO}}_2$ layer. The influence of production tolerance on the accuracy was evaluated. In the experimental part of this work, a sensor chip containing nanowire and nanorib waveguides realized in silicon on insulator technology was used to demonstrate the detection of refractive index and thickness of a ${\mathrm{TiO}}_2$ atomic layer deposition (ALD) layer.

【 授权许可】

Unknown