High-Tc micro and nano-constrictions modeling: hot spot approach for DC characteristics and HEB THz mixer performance

11th European Conference on Applied Superconductivity

Ladret, Romain G.^1 ; Dégardin, Annick F.^1 ; Kreisler, Alain J.^1

SUPÉLEC LGEP, CNRS UMR 8507, Univ Paris-Sud 11, 11 rue Joliot-Curie, Gif Sur Yvette cedex

91192, France^1

关键词: Conversion gain;    Current voltage;    DC characteristics;    Double-sideband;    Hot electron bolometer;    Local oscillators;    Noise temperature;    Phonon thermal conductivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/507/4/042020/pdf
DOI  :  10.1088/1742-6596/507/4/042020

来源: IOP

【 摘 要 】

High-TChot electron bolometers (HEB) are promising THz mixers due to their expected wide bandwidth, large mixing gain, and low intrinsic noise. We have simulated the characteristics of YBaCuO HEBs with a hot spot model usually dedicated to low-TCphonon cooled devices. With respect to e.g., NbN, the high-TCspecificities are mainly arising from the large values of YBaCuO phonon thermal conductivity, and the film to MgO substrate phonon escape time. The consequent effects on the electron temperature profiles along the YBaCuO constriction and the current voltage DC characteristics are considered. The conversion gain G and noise temperature TNwere computed for two constriction dimensions. For a 100 nm long × 100 nm wide × 10 nm thick constriction at 9 microwatt local oscillator (LO) power, the expected double sideband (DSB) TN1520 K (G -13.7 dB). For a larger (but more realistic according to YBaCuO aging effects) 400 nm long × 400 nm wide × 35 nm thick constriction, minimum TN1210 K DSB at 35 microwatt LO power (G -13.1 dB).