Review Application of Nanostructured Black Silicon

Nanoscale Research Letters

Yingchun Zhao¹  Ting Zhang²  Shibin Li²  Jian Lv²  Peng Zhang² 

[1] Beijing Haidian District Vocational School;State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC);

关键词: Black silicon;    High absorption;    SF6;    Internal quantum efficiency;    Application;   

DOI  :  10.1186/s11671-018-2523-4

来源: DOAJ

【 摘 要 】

Abstract As a widely used semiconductor material, silicon has been extensively used in many areas, such as photodiode, photodetector, and photovoltaic devices. However, the high surface reflectance and large bandgap of traditional bulk silicon restrict the full use of the spectrum. To solve this problem, many methods have been developed. Among them, the surface nanostructured silicon, namely black silicon, is the most efficient and widely used. Due to its high absorption in the wide range from UV-visible to infrared, black silicon is very attractive for using as sensitive layer of photodiodes, photodetector, solar cells, field emission, luminescence, and other photoelectric devices. Intensive study has been performed to understand the enhanced absorption of black silicon as well as the response extended to infrared spectrum range. In this paper, the application of black silicon is systematically reviewed. The limitations and challenges of black silicon material are also discussed. This article will provide a meaningful introduction to black silicon and its unique properties.

【 授权许可】

Unknown