The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

EMRS 2013 Spring Meeting, Symposium G: Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

Schimmel, S.^1 ; Kaiser, M.^1 ; Jokubavicius, V.^2 ; Ou, Y.^3 ; Hens, P.^2 ; Linnarsson, M.K.^4 ; Sun, J.^2 ; Liljedahl, R.^2 ; Ou, H.^3 ; Syväjärvi, M.^2 ; Wellmann, P.^1

Materials Department 6, University of Erlangen, Martensstrasse 7, D-91058 Erlangen, Germany^1

Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden^2

Department of Photonics Engineering, Technical University of Denmark, DK-2800 Lyngby, Denmark^3

School of Information and Communication Technology, KTH Royal Institute of Technology, SE-16440 Kista, Sweden^4

关键词: Dislocation densities;    Donor-acceptor pairs;    Doping concentration;    Gas phase composition;    Internal quantum efficiency;    Non-radiative lifetimes;    Photoluminescence intensities;    Sublimation epitaxy;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/56/1/012002/pdf
DOI  :  10.1088/1757-899X/56/1/012002

来源: IOP

【 摘 要 】

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.