Contactless determination of doping concentration and resistivity of silicon wafers with cavity ring-down technique

Results in Physics

Chunyu Zhang¹  Qian Wang²  Linqiu Tan³  Weiguo Liu³  Rong Liu³  Yujun Du³ 

[1] School of Optoelectronic Engineering, Xi'an Technological University, Xi'an 710021, China;Corresponding author.;School of Optoelectronic Engineering, Xi'an Technological University, Xi'an 710021, China;

关键词: Doping concentration;    Resistivity;    Cavity ring-down;    Free carrier absorption;    Silicon wafers;   

DOI  :  

来源: DOAJ

【 摘 要 】

A contactless method for measuring the doping concentration and resistivity of silicon wafers based on cavity ring-down technique was developed and verified experimentally. The doping concentration and resistivity of the silicon wafer in our experiment were calculated to be 1.53 ± 0.47 × 1016 cm−3 and 1.08 ± 0.41 Ω·cm, respectively, by measuring the optical loss caused by the sample, which are consistent with that obtained with conventional four-point probe measurements. The results indicated that the proposed method can be an alternative non-destructive tool for doping concentration and resistivity measurements.

【 授权许可】

Unknown