Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC

EMRS 2013 Spring Meeting, Symposium G: Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

Grivickas, V.^1 ; Gulbinas, K.^1 ; Jokubaviius, V.^2 ; Sun, J.W.^2 ; Karalinas, M.^1 ; Kamiyama, S.^3 ; Linnarsson, M.^4 ; Kaiser, M.^5 ; Wellmann, P.^5 ; Syväjärvi, M.^2

Institute of Applied Research, Vilnius University, Saultekio av. 10, Vilnius, 10223, Lithuania^1

Department of Physics, Chemistry and Biology, Linköping University, Linköping 58183, Sweden^2

Faculty of Science and Technology, Meijo University, Tempaku-ku, 468-8502, Nagoya, Japan^3

School of Information and Communication Technology, Royal Institute of Technology, Kista-Stockholm 58183, Sweden^4

Department of Materials Science-Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Erlangen, 91058, Germany^5

关键词: Donor-acceptor pairs;    Electron lifetime;    Free carrier absorption;    Injection levels;    Measurement geometry;    Non-radiative recombinations;    Sublimation growth;    Surface recombinations;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/56/1/012004/pdf
DOI  :  10.1088/1757-899X/56/1/012004

来源: IOP

【 摘 要 】

The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photo luminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.