Photoluminescence of undoped InAs autoepitaxial layers

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Firsov, D.D.^1 ; Komkov, O.S.^1 ; Petrov, A.S.^2

Micro- and Nanoelectronics Department, St. Petersburg Electrotechnical University LETI, Professora Popova street 5, St. Petersburg

197376, Russia^1

OJSC NRI Electron, Toreza ave. 68, St. Petersburg

194223, Russia^2

关键词: Donor-acceptor pairs;    Donor-bound exciton;    Excitation power density;    Free carrier concentration;    FT-IR-spectrometers;    Hydride vapour phase epitaxies;    Mobility measurements;    Photoluminescence properties;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012051/pdf
DOI  :  10.1088/1742-6596/643/1/012051

来源: IOP

【 摘 要 】

Photoluminescence (PL) properties of undoped InAs autoepitaxial layers are studied at various temperatures (9-120 K) and excitation power density (0.2-12.5 W/cm2). The studied structures have been grown on highly doped n++-InAs substrates by chloride-hydride vapour phase epitaxy method. PL spectra measurements were carried out with an FTIR spectrometer. The samples exhibit several luminescence peaks in the 2.9-3.3 μm range, which are attributed to free exciton transitions, deep donor bound excitons, and donor-acceptor pairs. A correlation is revealed between the PL intensity, and the background doping level of InAs epilayers - as supported by the free carrier concentration and mobility measurements, as well as SIMS data. A decrease of donor-bound exciton PL peak is observed for InAs sulfidized by Na2S.