Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Vasiliev, A.A.^1,2 ; Mozharov, A.M.^2 ; Rozhavskaya, M.M.^3 ; Lundin, V.V.^3 ; Mukhin, I.S.^2,4

Experimental Physics Department, Peter the Great Saint-Petersburg Polytechnic University, Saint Petersburg

194021, Russia^1

Renewable Energy Lab, St. Petersburg Academic University, St. Petersburg

194021, Russia^2

Physics of Semiconductor Heterostructures Lab, Ioffe Institute RAS, Saint Petersburg

194021, Russia^3

Metamaterial Lab, University ITMO, Saint-Petersburg

197101, Russia^4

关键词: Conductivity structures;    Electrical characteristic;    Free carrier concentration;    GaN nanowires;    Optimal annealing;    Titanium film;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012007/pdf
DOI  :  10.1088/1742-6596/741/1/012007

来源: IOP

【 摘 要 】

We researched electrical characteristics of GaN nanowires (NWs) grown by MOCVD through solid titanium film. The technology of creating the ohmic contacts and MESFET structure on single NWs has been developed. The optimal annealing temperature of contacts has been found and conductivity structure, the free carrier concentration and mobility has been evaluated.