High Temperature Annealing of MBE-grown Mg-doped GaN

33rd International Conference on the Physics of Semiconductors

Contreras, S.^1 ; Konczewicz, L.^1 ; Peyre, H.^1 ; Juillaguet, S.^1 ; Al Khalfioui, M.^2 ; Matta, S.^2 ; Leroux, M.^2 ; Damilano, B.^2 ; Brault, J.^2

Laboratoire Charles Coulomb (L2C), UMR 5221, CNRS, Université de Montpellier, CC074, Montpellier

FR-34095, France^1

CRHEA-CNRS, Centre de Recherche sur l'Hétéro-Epitaxie et Ses Applications, CNRS, Rue B. Grégory, Valbonne

FR-06560, France^2

关键词: Annealing effects;    Free carrier concentration;    Function of time;    High temperature resistivity;    High-temperature annealing;    Low temperature buffers;    Temperature range;    Thermally activated conduction process;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012018/pdf
DOI  :  10.1088/1742-6596/864/1/012018

来源: IOP

【 摘 要 】

In this report, are shown the results of high temperature resistivity and Hall Effect studies of Mg-doped GaN epilayers. The samples studied were grown on (0001) (c-plane) sapphire by molecular beam epitaxy and 0.5 μm GaN:Mg layers have been achieved on low temperature buffers of GaN (30 nm) and AlN ( 150 nm). The experiments were carried out in the temperature range from 300 K up to 900 K. Up to about 870 K a typical thermally activated conduction process has been observed with the activation energy value EA= 215 meV. However, for higher temperatures, an annealing effect is observed in all the investigated samples. The increase of the free carrier concentration as a function of time leads to an irreversible decrease of sample resistivity of more than 60%.