Investigation of temperature characteristics of UV-LEDs with different GaN/AlGaN heterostructures

18th International Conference PhysicA.SPb

Evseenkov, A.S.^1 ; Kurin, S.Yu.^2 ; Tadtaev, P.O.^1 ; Tarasov, S.A.^1 ; Solomonov, A.V.^1

St. Petersburg Electrotechnical University LETT, 5 Prof. Popova Street, St.-Petersburg

197376, Russia^1

GaN-Crystals Ltd., 27 Engels Ave, St.-Petersburg

194156, Russia^2

关键词: Auger recombination;    Emission spectrums;    Emissive power;    Internal quantum efficiency;    Low-temperature stability;    Lower emissions;    Peak wavelength;    Temperature characteristic;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012053/pdf
DOI  :  10.1088/1742-6596/769/1/012053

来源: IOP

【 摘 要 】

The quantum efficiency of AlInGaN-based LED structures with different active region thickness at different temperatures and biases was studied. The strong influence of the thickness of the active region on the characteristics of the samples was observed. Through the decrease of the active region thickness not only the emissive power dwindled but also thermodynamic properties tended to deteriorate and low temperature stability of the active region was observed. It was shown that the decrease in internal quantum efficiency through the increase of the current density was caused by charge leak from the quantum well. The heating of the active region due to the higher Auger recombination frequency led to the shift in the peak wavelength of the emission spectrum and lower emission power.