High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers

Optica Applicata

Maciej Bugajski¹  Anna Szerling¹  Jan Muszalski¹  Kamil Kosiel¹ 

关键词: high power semiconductor laser;    graded refractive index separate confinement heterostructure (GRINSCH);    threshold current;    external efficiency;    T0">parameter T0;    Auger recombination;    spontaneous radiative recombination;    nonradiative recombination;   

DOI  :  

学科分类：光谱学

来源: Politechnika Wroclawska * Oficyna Wydawnicza / Wroclaw University of Technology

【 授权许可】

Unknown