The effect of oxide aperture diameter on the electrical characteristics of the GaN-based vertical cavity surface emitting laser

IEICE Electronics Express

Haslan Abu Hassan¹  Azita Zandi Goharrizi¹  Zainuriah Hassan¹ 

[1] Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia

关键词: laser diodes;    vertical cavity surface emitting lasers;    threshold current;    distributed Bragg reflectors;   

DOI  :  10.1587/elex.9.179

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(19)In this paper, a numerically investigation of the aperture diameter in intracavity-contacted oxide-confined GaN-based VCSEL is presented. Simulation results show that with increasing of the current aperture diameter, there is a reduction in the differential resistance of the VCSEL. The influence of oxide aperture on the threshold current has also been investigated. There is an enhancement in the threshold current of the VCSEL by increasing the oxide aperture diameter.

【 授权许可】

Unknown