Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Vinnichenko, M.Ya.^1 ; Makhov, I.S.^1 ; Selivanov, A.V.^1 ; Firsov, D.A.^1 ; Vorobjev, L.E.^1 ; Shterengas, L.^2 ; Belenky, G.^2

Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg

195251, Russia^1

Department of Electrical and Computer Engineering, State University of New York at Stony Brook, New York

11794, United States^2

关键词: Auger recombination;    InGaAsSb;    Non-equilibrium carriers;    Non-radiative;    Non-radiative recombinations;    Photoluminescence intensities;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012017/pdf
DOI  :  10.1088/1742-6596/816/1/012017

来源: IOP

【 摘 要 】

The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.