Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

Nanoscale Research Letters

Yuhao Song¹  Nasir Ilyas¹  Wei Li²  Hao Zhong²  Yadong Jiang² 

[1] School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China;

关键词: Black silicon;    Light absorptance;    Band gap;    Device responsivity;   

DOI  :  10.1186/s11671-018-2741-9

来源: DOAJ

【 摘 要 】

Abstract Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especially in the near-infrared range (800 to 2000 nm). Meanwhile, the maximum light absorptance increases significantly up to 83%. A Si-PIN photoelectronic detector with microstructured black silicon at the back surface exhibits remarkable device performance, leading to a responsivity of 0.53 A/W at 1060 nm. This novel microstructured black silicon, combining narrow band gap characteristic, could have a potential application in near-infrared photoelectronic detection.

【 授权许可】

Unknown