Results in Physics | |
Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells | |
Azlan Abdul Aziz1  Auwal Abdulkadir2  Mohd Zamir Pakhuruddin2  | |
[1] Department of Physics, Umaru Musa Yar’adua University, P. M. B. 2218 Katsina, Nigeria;Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia; | |
关键词: ITO; Black silicon; Annealing; Heterojunction; Solar cell; | |
DOI : | |
来源: DOAJ |
【 摘 要 】
Indium tin oxide (ITO) serves as an excellent anti-reflective coating (ARC) and transparent contact in optoelectronic devices including in crystalline silicon (c-Si) solar cells. To enhance broadband light absorption in the c-Si solar cells, black silicon (b-Si) surfaces can be used to reduce light reflection within 300–1100 nm wavelength region. In this work, properties of 300 nm-thick ITO on b-Si after post-deposition annealing with different temperatures (200–500 °C) are investigated for application in heterojunction solar cells. Annealing the ITO at 400 °C produces the highest crystalline quality, moderate surface reflection and optimum electrical properties. For electrical characterization, ITO/b-Si/NiO and ITO/c-Si/NiO reference solar cells are illuminated with white light LED-based solar simulator at illumination of 47 mW/cm2 and temperature of 25 °C. The ITO/b-Si/NiO solar cells demonstrate higher short-circuit current density (Jsc) and open-circuit voltage (Voc) when compared to the reference solar cells.
【 授权许可】
Unknown