Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells

Results in Physics

Azlan Abdul Aziz¹  Auwal Abdulkadir²  Mohd Zamir Pakhuruddin² 

[1] Department of Physics, Umaru Musa Yar’adua University, P. M. B. 2218 Katsina, Nigeria;Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia;

关键词: ITO;    Black silicon;    Annealing;    Heterojunction;    Solar cell;   

DOI  :  

来源: DOAJ

【 摘 要 】

Indium tin oxide (ITO) serves as an excellent anti-reflective coating (ARC) and transparent contact in optoelectronic devices including in crystalline silicon (c-Si) solar cells. To enhance broadband light absorption in the c-Si solar cells, black silicon (b-Si) surfaces can be used to reduce light reflection within 300–1100 nm wavelength region. In this work, properties of 300 nm-thick ITO on b-Si after post-deposition annealing with different temperatures (200–500 °C) are investigated for application in heterojunction solar cells. Annealing the ITO at 400 °C produces the highest crystalline quality, moderate surface reflection and optimum electrical properties. For electrical characterization, ITO/b-Si/NiO and ITO/c-Si/NiO reference solar cells are illuminated with white light LED-based solar simulator at illumination of 47 mW/cm2 and temperature of 25 °C. The ITO/b-Si/NiO solar cells demonstrate higher short-circuit current density (Jsc) and open-circuit voltage (Voc) when compared to the reference solar cells.

【 授权许可】

Unknown