A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon

Nanoscale Research Letters

Zhongyuan Liu¹  Jian Lv²  Yi Zhang²  Longcheng Que²  Yun Zhou²  Guanyu Mi² 

[1] China Electronics Technology Group Corporation, Chongqing Acoustic Optic Electronic CO.,LT, 401332, Chong qing, China;State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, 610054, Cheng du, China;

关键词: Black silicon;    Near infrared enhanced;    Dual four-quadrant;    Photodetector;   

DOI  :  10.1186/s11671-021-03499-x

来源: Springer

【 摘 要 】

In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average absorptivity of 400–2200 nm band before annealing is 96.81%, and the absorptivity maintains at 81.28% after annealing at 600 degrees. Meanwhile, black silicon prepared under the new technology is used in double four-quadrant photodetector, the results show that, at a reversed bias of 50 V, the average unit responsiveness is 0.528 A/W at 1060 nm and 0.102 A/W at 1180 nm, and the average dark current is 2 nA at inner quadrants and 8 nA at outer quadrants. The dual four-quadrant photodetector based on near-infrared enhanced black silicon has the advantages of high responsiveness, low dark current, fast response and low crosstalk, hence it is appropriate for a series of direction of applications, such as night vision detection and medical field.

【 授权许可】

CC BY