Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions

IEEE Journal of the Electron Devices Society

D. Ristoiu¹  R. Ranica¹  R. Berthelon¹  F. Arnaud¹  L. Clement¹  L. Favennec¹  V. Caubet¹  J. P. Reynard¹  C. Jahan²  O. Weber²  J. Jasse³  G. Samanni³  E. Gomiero³  R. Annunziata³  P. Zuliani³ 

[1] Digital FEM Technology Research and Development, STMicroelectronics, Crolles, France;Silicon Component Department, CEA-LETI, Grenoble, France;Smart Power Technology Research and Development, STMicroelectronics, Agrate Brianza, Italy;

关键词: Amorphous;    chalcogenide;    phase change memory (PCM);    Ge-Sb-Te (GST) compounds;    quenching time;    resistance;   

DOI  :  10.1109/JEDS.2019.2913467

来源: DOAJ

【 摘 要 】

Quenching-time characterization is the way to measure the speed of chalcogenide material to transform from the amorphous (RESET) state to the crystalline (SET) one after application of a proper programming pulse. It is here proposed to study the impact of process and programming conditions on cell performances, highlighting possible composition variation, and modifications of the physical dimension of the PCM active volume (the dome).

【 授权许可】

Unknown