RESET failure analysis of phase change memory based on Ge2Sb2Te5

IEICE Electronics Express

Yuhan Wang¹  Yuchan Wang²  Xiaogang Chen³  Xiaoyun Li³ 

[1] School of Electrical and Electronic Engineering, Chongqing University of Technology;School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications;State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

关键词: phase change memory (PCM);    RESET failure;    EDS;    finite analysis;   

DOI  :  10.1587/elex.14.20170673

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

Some nonvolatile phase change memory (PCM) cells with 80 nm heating electrodes are found early RESET failure. The causes, which result in the early failure of the PCM, have been studied. Compared the energy dispersive X-ray spectroscopy (EDS) results, it is observed some segregation has occurred in the components at the positions close to the TiN and bottom electron contact (BEC) interface for the early failed cells. The main causes are considered to be the unstable interface between the Ti-rich TiN and the Ge2Sb2Te5 (GST-225) layers and the inconsistent manufacturing process. Thanks to the segregation, the chemical components of the material close to BEC in the early failed cells are found changed. The changed material is taken as the immediate reason for the RESET failure, which has been confirmed by a two-dimensional finite analysis.

【 授权许可】

CC BY