Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

IEEE Journal of the Electron Devices Society

卷:5

Yihan Chen¹  Longyan Wang¹  Lining Zhang¹  Panni Wang¹  Mansun Chan¹  Suwen Li¹  Salahuddin Raju¹  Xinnan Lin²  Zhitang Song³ 

[1] Hong Kong University of Science and Technology, Hong Kong;

[2] Shenzhen Key Lab of Advanced Electron Device and Integration, School of Electronic and Computer Engineering, Peking University of Shenzhen Graduate School, Shenzhen, China;

[3] State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shenzhen, China;

关键词: Ge₂Sb₂Te₅ (GST);    phase change memory (PCM);    carbon nanotube (CNT);   

DOI  :  10.1109/JEDS.2017.2734858

来源: DOAJ

【 摘 要 】

Phase change memory (PCM) formed by Ge₂Sb₂Te₅ (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using nickel catalyst at a low temperature. Reasonable contact characteristics between the CNTs and GST are achieved without material compatibility problem. Due to the small contact size of the CNT to the phase change material, a significant reduction in programming power is achieved compared to metal contact at the same via size. The temperature simulation result shows that the CNT filled via helps to reduce the programming area. The fabricated PCM on CNT filled via is able to endure more than 10⁴ SET/RESET cycles without observable degradation.

【 授权许可】

Unknown