Understanding the influence of RESET current due to the active region of phase change memory

IEICE Electronics Express

Yuchan Wang¹  Yueqing Wang²  Xiaogang Chen³  Xiaoyun Li³ 

[1] School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications;Shanghai Fudan Microelectronics Group Co., Ltd.;State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

关键词: phase change memory (PCM);    RESET;    active region;   

DOI  :  10.1587/elex.14.20170474

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

The RESET current of T-shaped phase change memory (PCM) cells based on Ge2Sb2Te5 (GST) with 35 nm heating electrodes has been studied to understand the influences of RESET current due to the active region via Transmission Electron Microscope (TEM) and testing. The results have been presented and analyzed. Based on the TEM images, it is found that the grains inside and outside the active region have different structures for the operated cells. And the RESET current can be effectively reduced by obtaining larger active region with the grains of Face Centered Cubic (FCC), confirmed by the testing results.

【 授权许可】

CC BY