Ultra-low power phase change memory with carbon nanotube interconnects

phase change memory;GeSbTe (GST);chalcogenide;carbon nanotubes;finite element modeling;COMSOL

Xiong, Feng ; Pop ; Eric

关键词: phase change memory;    GeSbTe (GST);    chalcogenide;    carbon nanotubes;    finite element modeling;    COMSOL;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/16782/Xiong_Feng.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.