Analog IGZO Memristor With Extended Capabilities

IEEE Journal of the Electron Devices Society

卷:8

C. Besleaga¹  V. Dumitru¹  O. N. Ionescu² 

[1] Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics, Magurele, Romania;

[2] Reliability Department, National Institute for Research and Development in Microtechnologies, Bucharest, Romania;

关键词: Memristor;    IGZO;    electronic synapse;   

DOI  :  10.1109/JEDS.2020.3006000

来源: DOAJ

【 摘 要 】

In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of magnitude. Larger resistance changes are also possible but they are mostly irreversible. The obtained memristor looks promising to be used as electronic synapse in hardware implemented artificial neural networks or for applications in analog computing and cryptography.

【 授权许可】

Unknown