Ferroelectric Field Effect Transistors Based on PZT and IGZO

IEEE Journal of the Electron Devices Society

Liliana-Marinela Balescu¹  George Stan¹  Andreea Costas¹  Cristina Besleaga¹  Lucian Pintilie²  Roxana Radu²  Viorel Dumitru²  Viorica Stancu² 

[1] Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics, M&x01CE;gurele, Romania;

关键词: Ferroelectric transistor;    PZT;    IGZO;   

DOI  :  10.1109/JEDS.2019.2895367

来源: DOAJ

【 摘 要 】

Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized. The PZT material was processed by a sol-gel method and then used as ferroelectric gate. The a-IGZO thin films, having the role of channel semiconductor, were deposited by radio-frequency magnetron sputtering, at a temperature of ~50°C. Characteristics of a typical field effect transistor with SiO₂ gate insulator, grown on highly doped silicon, and of the PZT-based FeFET were compared. It was proven that the FeFETs had promising performances in terms of I_on/I_off ratio (i.e., 10⁶) and IDS retention behavior.

【 授权许可】

Unknown