Formation of ZnO memristor structures by scratching probe nanolithography

Scanning Probe Microscopy 2018

Tominov, R.V.^1 ; Smirnov, V.A.^1 ; Avilov, V.I.^1 ; Fedotov, A.A.^1 ; Klimin, V.S.^1 ; Chernenko, N.E.^1

Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog

347928, Russia^1

关键词: Endurance test;    High-resistance state;    Low-resistance state;    Memristor;    Resistive switching;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/443/1/012036/pdf
DOI  :  10.1088/1757-899X/443/1/012036

来源: IOP

【 摘 要 】

This work presents the results of the formation and investigation of Al2O3/ZnO:In/ZnO/Ti memristor structures. It is shown that using Ti layer can improve memristive effect. Resistive switching from high resistance state (HRS) to low resistance state (LRS) occurred at 2.1 ? 0.3 V, and from LRS to HRS at -1.5 ? 0.3 V. Endurance test showed that HRS was 5.51 ? 0.13 Gω and LRS was 0.25 ? 0.05 Gω. HRS/LRS coefficient equalled to 22. The results can be useful for micro- and nanoelectronics elements manufacturing, as well as micro- and nanosystem engineering using probe nanotechnologies and for ZnO- based RRAM fabrication.