Modeling and experimental study of resistive switching in vertically aligned carbon nanotubes

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Ageev, O.A.^1 ; Blinov, Yu F.^1 ; Ilina, M.V.^1 ; Ilin, O.I.^1 ; Smirnov, V.A.^1

Southern Federal University, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, st. Shevchenko, 2, Taganrog

347928, Russia^1

关键词: High resistance;    Low-resistance state;    Model results;    Non-volatile;    Piezoelectric charge;    Resistive random access memory;    Resistive switching;    Vertically aligned carbon nanotube;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012168/pdf
DOI  :  10.1088/1742-6596/741/1/012168

来源: IOP

【 摘 要 】

Model of the resistive switching in vertically aligned carbon nanotube (VA CNT) taking into account the processes of deformation, polarization and piezoelectric charge accumulation have been developed. Origin of hysteresis in VA CNT-based structure is described. Based on modeling results the VACNTs-based structure has been created. The ration resistance of high-resistance to low-resistance states of the VACNTs-based structure amounts 48. The correlation the modeling results with experimental studies is shown. The results can be used in the development nanoelectronics devices based on VA CNTs, including the nonvolatile resistive random-access memory.