Scanning probe nanolithography of resistive memory element based on titanium oxide memristor structures

Scanning Probe Microscopy 2017

Avilov, V.I.^1 ; Polupanov, N.V.^1 ; Tominov, R.V.^1 ; Smirnov, V.A.^1 ; Ageev, O.A.^1

Southern Federal University, Institute of Nanotechnologies, Electronics and Equipment Engineering, Research and Education Center Nanotechnologies, Taganrog

347922, Russia^1

关键词: Local anodic oxidation;    Memristor;    Resistive memory;    Scanning probe nano-lithography;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/256/1/012001/pdf
DOI  :  10.1088/1757-899X/256/1/012001

来源: IOP

【 摘 要 】

The paper presents the results of the formation of the resistive memory element prototype based on the memristor structures of titanium oxide using probe nanolithography by the local anodic oxidation. Such structures exhibit a memristor effect without carrying out an additional electroforming operation.