Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics

Nanoscale Research Letters

卷:12

Pang-Shiu Chen¹  Kan-Hsueh Tsai²  Pei-Hua Wang²  Heng-Yuan Lee²  Yu-De Lin²  Sk. Ziaur Rahaman²  Chien-Hua Hsu²  Yu-Sheng Chen²  Wei-Su Chen²  Ya-Chin King³  Chrong Jung Lin³ 

[1] Department of Chemical and Materials Engineering, MingShin University of Science and Technology;

[2] Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute;

[3] Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua University;

关键词: Retention;    TaO/HfO x;    TaO/AlO x;    Self-rectifying;    Resistive memory;    Trapping-type;   

DOI  :  10.1186/s11671-017-2179-5

来源: DOAJ

【 摘 要 】

Abstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions.

【 授权许可】

Unknown