Nanoscale Research Letters | 卷:12 |
Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics | |
Pang-Shiu Chen1  Kan-Hsueh Tsai2  Pei-Hua Wang2  Heng-Yuan Lee2  Yu-De Lin2  Sk. Ziaur Rahaman2  Chien-Hua Hsu2  Yu-Sheng Chen2  Wei-Su Chen2  Ya-Chin King3  Chrong Jung Lin3  | |
[1] Department of Chemical and Materials Engineering, MingShin University of Science and Technology; | |
[2] Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute; | |
[3] Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua University; | |
关键词: Retention; TaO/HfO x; TaO/AlO x; Self-rectifying; Resistive memory; Trapping-type; | |
DOI : 10.1186/s11671-017-2179-5 | |
来源: DOAJ |
【 摘 要 】
Abstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions.
【 授权许可】
Unknown