The Formation of a Height-Modulated Dielectric Film

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Zotov, A.O.^1 ; Perevalov, A.A.^1 ; Sagunova, I.V.^1

National Research University of Electronic Technology Russia, Zelenograd, Shokina Square, Bld. 1, Moscow

124498, Russia^1

关键词: Constant bias;    Dielectric mask;    Gray scale intensities;    Local anodic oxidation;    Local dielectrics;    Oxide thickness;    Scanning probes;    Voltage impulse;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012021/pdf
DOI  :  10.1088/1757-899X/475/1/012021

来源: IOP

【 摘 要 】

The local anodic oxidation process allows creating a constantly-heighted local dielectric mask. In the course of mask formation the scanning probe moves over a particular surface area applying simultaneous constant bias voltage in each scanning point (these bias voltage impulses have the same value and duration). It is obvious that if we need to create a dielectric mask with a different oxide thickness or a height-modulated film, it is necessary to vary the impulse duration or its value at different scanning field areas. This investigation illustrates the possibility of creating a height-modulated oxide by applying the method of local anodic oxidation based on any greyscale modulated mask when the impulse duration and its magnitude is varied proportionally to the gray scale intensity.