Study and production of thin-film memristors based on TiO2 _ TiOx layers

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Zhidik, E.V.^1^2 ; Troyan, P.E.^1 ; Sakharov, Y.V.^1 ; Zhidik, Y.S.^1 ; Korzhenko, D.V.^2

Tomsk State University of Control Systems and Radio-Electronics, pr. Lenina, 40, Tomsk

634050, Russia^1

Institute of Physics and Technology, National Research Tomsk Polytechnic University, pr. Lenina, 30, Tomsk

634050, Russia^2

关键词: Memristor;    MIM structure;    Non-stoichiometric;    Rare earth metals;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012022/pdf
DOI  :  10.1088/1757-899X/498/1/012022

来源: IOP

【 摘 要 】

Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO2) and nonstoichiometric (TiOx) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming.