Mg co-doping effects on Ce doped Y3(Ga,Al)5O12 scintillator

2016 International Conference on Defects in Insulating Materials

Kamada, Kei^1,2 ; Yamaji, Akihiro^3 ; Kurosawa, Shunsuke^1 ; Yokota, Yuui^1 ; Ohashi, Yuji^3,4 ; Yoshikawa, Akira^1,2,3

New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Sendai

980-8579, Japan^1

CandA Corporation, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai

980-8579, Japan^2

Institute for Material Reseach, Tohoku University, 2-1-1, Sendai

980-8577, Japan^3

Institute of Physics AS CR, Prague

16253, Czech Republic^4

关键词: Anti-site defect;    Co-doping effects;    Emission intensity;    Excitation and emission spectra;    Light yield;    Non-stoichiometric;    Scintillation decay time;    Scintillation properties;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/169/1/012013/pdf
DOI  :  10.1088/1757-899X/169/1/012013

来源: IOP

【 摘 要 】

Nonstoichiometric Lu3Al5+xO12(x= 0.05, 0.15, 0.35, 0, -0.05, -0.15, -0.35) crystals were grown by the μ-PD method. Luminescence and scintillation properties such as absorption, excitation and emission spectra, light yield and decay time were evaluated. Expected anti-site defect related host emission have been observed in 250-420nm. Emission intensity was increased by increasing the nonstochiometry. The x=-0.35 sample showed the highest light yield of around 12000 photons/MeV and slowest scintillation decay time of 1.96μs.