Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

ETRI Journal

关键词: oxygen binding energy;    XPS;    thin-film transistor;    electrical stability;    IGZO;    In-Ga-Zn oxide;   

Others  :  1186275
DOI  :  10.4218/etrij.12.0212.0232

【 摘 要 】

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

   

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