Design and investigation of double gate Schottky barrier MOSFET using gate engineering

Micro & nano letters

article

Sumit Kale¹  P.N. Kondekar¹ 

[1] Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology

关键词: MOSFET;    Schottky barriers;    silicon;    elemental semiconductors;    work function;    tunnelling;    double gate Schottky barrier MOSFET;    gate engineering;    isolated gates;    control gate;    n-type region;    source/drain contact-channel interfaces;    ultrathin intrinsic silicon channel;    work-function metal N-gates;    Schottky barrier height;    tunnelling barrier;    carrier injection;    random dopant fluctuations;    Si;   

DOI  :  10.1049/mnl.2015.0046

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Left atrial myxomas are rare cardiac tumours. When diagnosed, these need to be surgically excised as early as possible as these are known to cause dangerous complications, e.g. intracardiac obstruction and embolism. But when presented as an incidental finding on routine echocardiography in a patient presenting with epigastric hernia it creates a clinical dilemma as to which surgery should be performed first. We present one such case of left atrial myxoma in a 58 year old male patient, who underwent hernioplasty under general anesthesia with thoracic epidural analgesia.

【 授权许可】

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