Ultraviolet photodiodes based on AlGaN solid solutions

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Lamkin, I.^1 ; Tarasov, S.^1

Saint Petersburg Electrotechnical University LETI, Educational Research Laboratory of Photonics, Department of Micro-and Nanoelectronics, Russia^1

关键词: Mole fraction;    Schottky barriers;    Solar blind;    Ultra-violet photodetectors;    Wide band gap;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012025/pdf
DOI  :  10.1088/1742-6596/461/1/012025

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

We present the characteristics of ultraviolet photodiodes based on Schottky barriers to the Aluminum Gallium Nitride (AlGaN) solid solution. The paper is devoted to the creation of ohmic and rectifying contacts to AlxGa1-xN solid solutions with a high (x > 0.5) proportion of AlN. The most important property of (AlxGa1-xN) materials is their solar blindness: the wide bandgap (Eg 3.4 eV for GaN; 6.2 eV for AlN) makes these materials insensitive to the visual and IR light. The study of solid solutions with various mole fractions of Al has created solar-blind and see-blind ultraviolet photodetectors.