Investigation into the processes of atom redistribution encountered during of the formation of metal layers on the surface of aluminum gallium nitride

16th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Lamkin, I.A.^1 ; Tarasov, S.A.^1 ; Petrov, A.A.^1 ; Menkovich, E.A.^1 ; Solomonov, A.V.^1 ; Kurin, S.Yu.^2

Saint-Petersburg Electrotechnical University lETT, Prof. Popova 5, St. Petersburg

197376, Russia^1

GaN-Crystals Ltd., 27 Engels Ave, St. Petersburg

194156, Russia^2

关键词: Double layers;    Electronic device;    Low resistance;    Low-resistance contacts;    Metal contacts;    Metal layer;    Ultra-violet photodetectors;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/572/1/012062/pdf
DOI  :  10.1088/1742-6596/572/1/012062

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

The results of an investigation into the properties of double-layer metal contacts to the epitaxial layers of AlxGa1-xN solid solutions for ultraviolet photodetectors and UHF electronic devices are presented. The processes of atom redistribution during the formation of metal layers and their subsequent annealing to form low resistance contacts were studied by Auger electron spectroscopy. The results obtained allowed us to develop a technique for creating ohmic contacts having low resistance value.