Asymmetric lightly doped Schottky barrier CNTFET

Micro & nano letters

article

Amin Ghasemi Nejad Raeini¹  Zoheir Kordrostami² 

[1] Gole Gohar mining and Industrial Co;Department of Electrical and Electronic Engineering, Shiraz University of Technology

关键词: Schottky barriers;    carbon nanotube field effect transistors;    leakage currents;    semiconductor doping;    asymmetric lightly doped Schottky barrier carbon nanotube field effect transistor;    quantum simulations;    SB_CNTFETs structures;    electrical characteristics;    intrinsic channel;    symmetrically doped source;    symmetrically doped source SB_CNTFET;    drain SB_CNTFET;    asymmetric lightly doped design;    leakage current;    lateral electric field;    short-channel effects;    cutoff frequency characteristics;    channel lengths;    size 30 nm;   

DOI  :  10.1049/mnl.2015.0434

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Aims: The aim of our study was to compare the onset and duration of sensory and motor block, hemodynamic effects, neonatal outcome and adverse effects of isobaric levobupivacaine and hyperbaric bupivacaine in parturients undergoing elective lower segment cesarean section.

【 授权许可】

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