InAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Dmitriev, D.V.^1 ; Valisheva, N.A.^1 ; Gilinsky, A.M.^1 ; Chistokhin, I.B.^1 ; Toropov, A.I.^1 ; Zhuravlev, K.S.^1

Rzhanov Institute of Semiconductor Physics, pr. ac. Lavrentieva 13, Novosibirsk

630090, Russia^1

关键词: InAlAs/InGaAs/InP;    InP substrates;    Lattice-matched;    Manufacturing process;    Schottky barriers;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012022/pdf
DOI  :  10.1088/1757-899X/475/1/012022

来源: IOP

【 摘 要 】

Pre-epitaxial (001)InP substrate cleaning, growth of In0.52Al0.48As/In0.53Ga0.47As heterostructures lattice-matched to InP substrate by molecular beam epitaxy technique and manufacturing processes of microwave photodiodes with Schottky barrier are developed in this work.