Bandgap control for the lattice-matched InGaAs/InAlAs/InP single quantum wells

1st International Conference on New Material and Chemical Industry

材料科学;化学工业

Wang, Y.^1,2 ; Sheng, X.Z.^1 ; Guo, Q.L.^2 ; Liang, B.L.^2

School of Science, Beijing Jiaotong University, Beijing

100044, China^1

College of Physics Science and Technology, Hebei University, Baoding

071002, China^2

关键词: Emitting wavelengths;    Excitation intensity;    In0.53Ga0.47As;    Lattice-matched;    Low temperatures;    Single quantum well;    Time-resolved photoluminescence;    Well width;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/167/1/012022/pdf
DOI  :  10.1088/1757-899X/167/1/012022

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In0.53Ga0.47As/In0.52Al0.48As single quantum well (SQW) grown by molecular-beam epitaxy on the InP (001) substrate is investigated by using photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL). At the low temperature of 8 K and excitation intensity of 1 W/cm2, the emitting wavelength of QWs shifts from 1387 nm to 1537 nm when the well width increases from 5 nm to 50 nm, approaching the emitting wavelength of bulk In0.52Al0.48As. The emitting wavelength of QWs can be flexibly tailored by varying the thickness of the InGaAs layer.