Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

IEICE Electronics Express

S. Shaari¹  K. Kandiah¹  P. S. Menon¹ 

[1] Photonics Technology Laboratory, Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM)

关键词: mobility;    In0.53Ga0.47As;    p-i-n;    photodiode;    lateral;    interdigitated;   

DOI  :  10.1587/elex.5.303

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)Cited-By(5)The fitted parameters for the analytic function used to specify doping- and temperature-dependent low-field mobilities for In0.53Ga0.47As is described in this paper. The developed model was compared with other mobility models as well as measured Hall data from periodical literature and very good agreement is observed. The result of this work was used to develop an In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) model and good correlation was obtained when compared with the experimentally developed device. The results of this work would be useful in the development of In0.53Ga0.47As-based devices using commercial device simulation packages.

【 授权许可】

Unknown