Investigation of spinodal decomposition of InGaAsP solid solutions grown by the MOCVD technique

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Marichev, A.E.^1,2 ; Pushnyi, B.V.^1,3 ; Levin, R.V.^1,3

Ioffe Institute, St. Petersburg, Russia^1

Saint-Petersburg State Electrotechnical University LETI, St. Petersburg, Russia^2

Submicron Heterostructures for Microelectronics Research and Engineering Center, RAS, St. Petersburg, Russia^3

关键词: Fractal analysis;    InGaAsP;    InP substrates;    Reflectance anisotropy spectroscopy;    Solution layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012010/pdf
DOI  :  10.1088/1742-6596/690/1/012010

来源: IOP

【 摘 要 】

Technology for growing layers of InGaAsP solid solutions with Eg ∼ 1.0 - 1.2 eV on InP substrates by the MOCVD technique in the spinodal decomposition region has been elaborated. Results of the investigation of solid solution layers by the methods of photoluminescence, reflectance anisotropy spectroscopy and fractal analysis are presented.