Obtaining solid solutions of InGaAsPInGaAsP solid solutions in the spinoidal decomposition region

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Marichev, A.E.^1,2 ; Levin, R.V.^1,3 ; Gagis, G.S.^1 ; Gordeeva, A.B.^1

Ioffe Institute, St. Petersburg, Russia^1

Saint-Petersburg State Electrotechnical University LETI, St. Petersburg, Russia^2

Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS, St. Petersburg, Russia^3

关键词: Fractal analysis;    InGaAsP;    InP substrates;    Metal-organic vapour phase epitaxy;    Reflectance anisotropy spectroscopy;    Solution layers;    Spinoidal decomposition;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012039/pdf
DOI  :  10.1088/1742-6596/741/1/012039

来源: IOP

【 摘 要 】

Technology for growing layers of InGaAsP solid solutions with Eg ∼ 1.0 - 1.2eV on InP substrates in the spinodal decomposition region by the metalorganic vapour phase epitaxy (MOVPE) technique has been developed. Results of investigation of the obtained solid solution layers by the methods of photoluminescence, reflectance anisotropy spectroscopy and fractal analysis are presented.